Редактирование: Open Manufacturing (раздел)

=== Epitaxy ===

[[Molecular Manufacturing#Patterned Atomic Layer Epitaxy|Patterned Atomic Layer Epitaxy]] (PALE) consists of using a [[Scanning Tunneling Microscope]] on a Hydrogen-terminated Silicon surface to remove individual Hydroge atoms. A variety of cases can be injected into the chamber, where they deposit on the depassivated area of the surface. [http://en.wikipedia.org/wiki/Silylene Silylene] (SiH<sub>2</sub>), in particular, will deposit and add a new layer to the crystal on the depassivated site.

Vertical growth is simple to achieve, but 3D, moving objects can be built using the same method: Grow a bed of Germanium, then grow the Silicon structures on top, and etch away the Ge to remove the structures and machines.
Описание	Что вы вводите	Что вы получаете
Курсив	''Курсивное начертание''	Курсивное начертание
Полужирный	'''Полужирное начертание'''	Полужирное начертание
Полужирный курсив	'''''Полужирный курсив'''''	Полужирный курсив