Редактирование: Molecular manufacturing (раздел)

= Patterned Atomic Layer Epitaxy =

[[Image:PALE_Explanation.jpg|center|600px]]

[[Molecular Manufacturing#Patterned Atomic Layer Epitaxy|Patterned Atomic Layer Epitaxy]] (PALE) consists of using a [[Scanning Tunneling Microscope]] on a Hydrogen-terminated Silicon surface to remove individual Hydroge atoms. A variety of cases can be injected into the chamber, where they deposit on the depassivated area of the surface. [http://en.wikipedia.org/wiki/Silylene Silylene] (SiH<sub>2</sub>), in particular, will deposit and add a new layer to the crystal on the depassivated site.

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Vertical growth is simple to achieve, but 3D, moving objects can be built using the same method: Grow a bed of Germanium, then grow the Silicon structures on top, and etch away the Ge to remove the structures and machines.

== Epitaxial Assembler ==